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| 1. product profile 1.1 general description 400 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 1805 mhz to 1995 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 7.5 db at 0.01 % probability on ccdf; carrier spacing = 5 mhz; f 1 = 1807.5 mhz; f 2 = 1812.5 mhz; f 3 = 1872.5 mhz; f 4 = 1877.5 mhz. 1.2 features and benefits ? decoupling leads to enable improved video bandwidth (vbw) (120 mhz typical) ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? design optimized for gull-wing ? excellent ruggedness ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier applications in the 1805 mhz to 1995 mhz frequency range blf8g20ls-400pv; BLF8G20LS-400PGV power ldmos transistor rev. 1 ? 25 june 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab pr oduction test circuit, tested on straight lead device. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 1805 to 1995 3400 28 95 19 28 ? 33 [1]
blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 2 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information table 2. pinning pin description simplified outline graphic symbol blf8g20ls-400pv (sot1242b) 1drain1 2drain2 3gate1 4gate2 5source [1] 6 decoupling1 7 decoupling2 8n . c . 9n . c . BLF8G20LS-400PGV (sot1242c) 1d r a i n 1 2d r a i n 2 3g a t e 1 4g a t e 2 5s o u r c e [1] 6 decoupling1 7 decoupling2 8n . c . 9n . c . d d d d d d table 3. ordering information type number package name description version blf8g20ls-400pv - earless flanged ceramic package; 8 leads sot1242b BLF8G20LS-400PGV - earless flanged ceramic package; 8 leads sot1242c blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 3 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 4. limiting values [1] continuous use at maximum temperature will affect the reliability. 5. thermal characteristics 6. characteristics table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 80 w 0.23 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 3.0 ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 300 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 3.0 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 51.5 - a i gss gate leakage current v gs =11 v; v ds = 0 v - - 300 na g fs forward transconductance v ds =10v; i d =15a - 20.6 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 10.5 a - 0.055 - ? table 7. rf characteristics test signal: 2-carrier w-cdma; par = 7.5 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1-64 dpch; f 1 = 1807.5 mhz; f 2 = 1812.5 mhz; f 3 = 1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds =28v; i dq = 3400 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit, tested on straight lead device. symbol parameter conditions min typ max unit g p power gain p l(av) =95w 17.8 19 - db rl in input return loss p l(av) =95w - ? 12 ? 6db ? d drain efficiency p l(av) =95w 24 28 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =95w - ? 33 ? 28 dbc blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 4 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7. test information 7.1 ruggedness in class-ab operation the blf8g20ls-400pv and BLF8G20LS-400PGV are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 3300 ma; 2-carrier w-cdma signal; p l =200 w; f c = 1800 mhz; 5 mhz spacing, 46 % clipping. 7.2 impedance information [1] z s and z l defined in figure 1 . table 8. typical impedance for the top-half of the push-pull package measured load-pull data; i dq = 1800 ma; v ds = 28 v; t case = 25 ? c, water cooled. f z s [1] z l [1] (mhz) (? ) (? ) blf8g20ls-400pv (straight lead) 1800 4.1 ? j4.66 4.1 ? j4.5 1840 5.2 ? j3.6 4.4 ? j4.4 1880 4.6 ? j1.45 4.85 ? j4.25 1930 2.8 ? j0.3 4.5 ? j4.3 1960 2.1 ? j0.5 5.5 ? j3.5 1990 1.56 ? j0.6 5.5 ? j3.4 BLF8G20LS-400PGV (gull-wing) 1800 3.7 ? j7.6 4.2 ? j6.8 1840 4.34 ? j6.1 4.4 ? j6.7 1880 4.75 ? j5.2 4 ? j6.4 1930 3.17 ? j3.4 4.6 ? j6.5 1960 2 ? j3.05 5.8 ? j5.5 1990 2.5 ? j2.6 5.8 ? j5.7 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 5 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7.3 vbw in class-ab operation the blf8g20ls-400pv and BLF8G20LS-400PGV have a video bandwidth of 120 mhz (typical) when measured in a class-ab test circuit operating in the 1800 mhz to 1880 mhz frequency band for v ds = 28 v and i dq = 3.3 a, where the vbw is defined as the location of the resonance in the base-band impedance measurement obtained using a low-frequency probe. the vbw measurement based on the 2-tone imd test as a function of carrier spacing is shown below. (1) imd low (2) imd high fig 2. vbw capacity in a class-ab test circuit d d d f d u u l h u v s d f l q j 0 + ] , 0 ' , 0 ' , 0 ' g % f g % f g % f , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 6 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7.4 test circuit printed-circuit board (pcb): rogers 4350b; ? r = 3.66; thickness = 0.762 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 3. component layout table 9. list of components see figure 3 for component layout. component description value remarks c1, c5, c16, c20 multilayer ceramic chip capacitor 10 ? f, 50 v murata, smd 2220 c2, c6, c15, c19 multilayer ceramic chip capacitor 4.7 ? f, 50 v murata c3, c7, c14, c18 multilayer ceramic chip capacitor 1 nf atc100b c4, c8, c9, c10, c13, c17, c21 multilayer ceramic chip capacitor 24 pf atc100b c11, c12 multilayer ceramic chip capacitor 100 pf atc100b c22, c23 electroly tic capacitor 2200 ? f, 6 3 v r1, r2 resistor 10 ? smd 1206 r3, r5 resistor 5.1 ? smd 1206 r4 resistor 33 ? smd 1206 & & & & & & & & & & & & & 5 5 5 5 & & 5 p p p p l q s x w & & & & & & & & r x w s x w d d d p p blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 7 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7.5 graphical data 7.5.1 cw v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 4. power gain as a function of average output power; typical values fig 5. drain efficiency as a function of average output power; typical values v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 6. input return loss as a function of average output power; typical values d d d 3 / $ 9 g % p * s * s g % g % g % d d d 3 / $ 9 g % p ' ' d d d 3 / $ 9 g % p 5 / 5 / l q l q 5 / l q g % g % g % blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 8 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7.5.2 pulsed cw v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 7. power gain as a function of average output power; typical values fig 8. drain efficiency as a function of average output power; typical values v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 9. input return loss as a function of average output power; typical values d d d 3 / $ 9 g % p * s * s g % g % g % d d d 3 / $ 9 g % p ' ' d d d 3 / $ 9 g % p 5 / 5 / l q l q 5 / l q g % g % g % blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 9 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7.5.3 is-95 v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 10. power gain as a function of average output power; typical values fig 11. drain efficiency as a function of average output power; typical values v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 12. peak-to-average power ratio as a function of average output power; typical values fig 13. peak output power as a function of average output power; typical values d d d 3 / $ 9 g % p * s * s g % g % g % d d d 3 / $ 9 g % p ' ' d d d 3 / $ 9 g % p 3 $ 5 3 $ 5 3 $ 5 g % g % g % d d d 3 / $ 9 g % p 3 / 0 / 0 3 / 0 g % g % g % blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 10 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7.5.4 1-carrier w-cdma v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 14. input return loss as a function of average output power; typical values d d d 3 / $ 9 g % p 5 / 5 / l q l q 5 / l q g % g % g % v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 15. power gain as a function of average output power; typical values fig 16. drain efficiency as a function of average output power; typical values d d d 3 / $ 9 g % p * s * s g % g % g % d d d 3 / $ 9 g % p ' ' blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 11 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 17. peak-to-average power ratio as a function of average output power; typical values fig 18. peak output power as a function of average output power; typical values v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 19. input return loss as a function of average output power; typical values d d d 3 / $ 9 g % p 3 $ 5 3 $ 5 3 $ 5 g % g % g % d d d 3 / $ 9 g % p 3 / 0 / 0 3 / 0 g % g % g % d d d 3 / $ 9 g % p 5 / 5 / l q l q 5 / l q g % g % g % blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 12 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 7.5.5 2-carrier w-cdma v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 20. adjacent channel power ratio (5 mhz) as a function of average output power; typical values fig 21. adjacent channel power ratio (10 mhz) as a function of average output power; typical values d d d 3 / $ 9 g % p $ & 3 5 $ & 3 5 0 0 $ & 3 5 0 g % f g % f g % f d d d 3 / $ 9 g % p $ & 3 5 $ & 3 5 0 0 $ & 3 5 0 g % f g % f g % f v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 22. power gain as a function of average output power; typical values fig 23. drain efficiency as a function of average output power; typical values d d d 3 / $ 9 g % p * s * s g % g % g % d d d 3 / $ 9 g % p ' ' blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 13 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 24. peak-to-average power ratio as a function of average output power; typical values fig 25. peak output power as a function of average output power; typical values v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 26. input return loss as a function of average output power; typical values d d d 3 / $ 9 g % p 3 $ 5 3 $ 5 3 $ 5 g % g % g % d d d 3 / $ 9 g % p 3 / 0 / 0 3 / 0 g % g % g % d d d 3 / $ 9 g % p 5 / 5 / l q l q 5 / l q g % g % g % blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 14 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz v ds =28v; i dq = 3400 ma. (1) f = 1805 mhz (2) f = 1840 mhz (3) f = 1880 mhz fig 27. adjacent channel power ratio (5 mhz) as a function of average output power; typical values fig 28. adjacent channel power ratio (10 mhz) as a function of average output power; typical values d d d 3 / $ 9 g % p $ & 3 5 $ & 3 5 0 0 $ & 3 5 0 g % f g % f g % f d d d 3 / $ 9 g % p $ & 3 5 $ & 3 5 0 0 $ & 3 5 0 g % f g % f g % f blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 15 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 8. package outline fig 29. package outline sot1242b 5 h i h u h q f h v 2 x w o l q h y h u v l r q ( x u r s h d q s u r m h f w l r q , v v x h g d w h , ( & - ( ' ( & - ( , 7 $ 6 2 7 % v r w e b s r l q f k h v p d [ q r p p l q 1 r w h 0 l o o l p h w h u g l p h q v l r q v d u h g h u l y h g i u r p w k h r u l j l q d o l q f k g l p h q v l r q v ' l p h q v l r q l v p h d v x u h g l q f k p p i u r p w k h e r g \ ( d u o h v v i o d q j h g f h u d p l f s d f n d j h o h d g v 6 2 7 % 8 q l w p p p d [ q r p p l q $ ' l p h q v l r q v e e f ' ' h h ( ( ) + 4 8 8 z \ y p p v f d o h e 4 h h e z % \ ( ( 8 + 8 f ' ' % $ y $ $ ) blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 16 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor fig 30. package outline sot1242c 5 h i h u h q f h v 2 x w o l q h y h u v l r q ( x u r s h d q s u r m h f w l r q , v v x h g d w h , ( & - ( ' ( & - ( , 7 $ 6 2 7 & v r w f b s r 1 r w h 0 l o o l p h w h u g l p h q v l r q v d u h g h u l y h g i u r p w k h r u l j l q d o l q f k g l p h q v l r q v ( d u o h v v i o d q j h g f h u d p l f s d f n d j h o h d g v 6 2 7 & \ 8 q l w p p p d [ q r p p l q $ ' l p h q v l r q v e ' ' h ( ( ) + 8 8 y \ z l q f k h v p d [ q r p p l q e f h 4 / s v f d o h p p ' ' $ ) y $ 8 + $ 8 h h % e e z % ? ? ? ? g h w d l o ; / s 4 p p j d x j h s o d q h ; f ( ( blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 17 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge imd intermodulation distortion is-95 interim standard 95 ldmos laterally diffused metal oxide semiconductor par peak-to-average ratio smd surface mounted device vswr voltage standing wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes blf8g20ls-400pv_ls-400pgv v.2 20130625 product data sheet - blf8g20ls-400pv _ls-400pgv v.1 modifications ? the status of this document has been changed to product data sheet blf8g20ls-400pv_ls-400pgv v.1 20130606 preliminary data sheet - - blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 18 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. blf8g20ls-400pv_ls-400pgv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 25 june 2013 19 of 20 nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp semiconductors blf8g20ls-400p(g)v power ldmos transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 25 june 2013 document identifier: blf8g20ls-400pv_ls-400pgv please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.1 ruggedness in class-ab operation . . . . . . . . . 4 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 vbw in class-ab operation . . . . . . . . . . . . . . . 5 7.4 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.5 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.5.1 cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.5.2 pulsed cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.5.3 is-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7.5.4 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . 10 7.5.5 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . 12 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 9 handling information. . . . . . . . . . . . . . . . . . . . 17 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 13 contact information. . . . . . . . . . . . . . . . . . . . . 19 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 |
Price & Availability of BLF8G20LS-400PGV
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